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Part Number: ELW135
Description:
The ELW135, ELW136 and ELW4503 devices each consist of an infrared emitting diode, optically
coupled to a high speed photo detector transistor.
A separate connection for the photodiode bias and output-transistor collector increase the speed by
several orders of magnitude over conventional phototransistor couplers by reducing the
base-collector capacitance of the input transistor.
The devices are packaged in an 8-pin DIP wide body package and available in wide-lead spacing and SMD option.
Features:
High speed 1Mbit/s
High isolation voltage between input and output (Viso=5000 Vrms )
Guaranteed performance from 0°C to 70°C
Wide operating temperature range of -55°C to 100°C
Pb free and RoHS compliant
UL approved (No. 214129)
VDE approved (No. 40028391)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
Applications:
Line receivers
Telecommunication equipments
Power transistor isolation in motor drives
Replacement for low speed phototransistor photo couplers
Feedback loop in switch-mode power supplies
Home appliances
High speed logic ground isolation
| Package | 8-Pin DIP Wide Body |
| Mounting | Through Hole |
| Type | 1Mbps Dual |
| Number of Pins | 8Pins |
| Length | 11.5mm |
| Width | 9mm |
| Height | 3.9mm |
| Number of Channels | Single |
| Max. Forward current | 25mA |
| Max. Forward Voltage | 1.8V |
| Min. Propagation Delay Tplh | 1.5uS |
| Min. CTR | 7% |
| Min. CMTI | 10V/uS |
| Max. Propagation Delay Tplh | 1.5uS |
| Max. CTR | 50% |
| Common Mode Transient Immunity at High (CMH) | 1kV/uS |
| Min. Isolation Voltage | 5000V |
| Max. Saturation Voltage Vce | 0.4V |
| Max. Power Dissipation | 100mW |
| Min. Operating Temp. | -55C |
| Max. Operating Temp. | 100C |
| Packaging | Tube |
| Min. Storage Temp. | -55C |
| Max. Storage Temp. | 125C |
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