Description
The EL053X devices each consist of an infrared emitting diode, optically coupled to a high speed
photo detector transistor. A separate connection for the photodiode bias and output-transistor
collector increase the speed by several orders of magnitude over conventional phototransistor
couplers by reducing the base-collector capacitance of the input transistor.
The devices are packaged in an 8-pin small outline package which conforms to the standard SO-8
footprint.
Features
Compliance Halogen Free.(Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm)
High speed 1Mbit/s
High isolation voltage between input and output (Viso=3750 Vrms )
Guaranteed performance from 0°C to 70°C
Wide operating temperature range of -55°C to 100°C
Compliance with EU REACH
Pb free and RoHS compliant
UL and cUL approved(No. E214129)
VDE approved (No. 40028116)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
Applications
Line receivers
Telecommunication equipments
Power transistor isolation in motor drives
Replacement for low speed phototransistor photo couplers
Feedback loop in switch-mode power supplies
Home appliances
High speed logic ground isolation
Package | 8-Pin SOP |
Mounting | SMD |
Type | 1Mbps Dual |
Number of Pins | 8Pins |
Length | 3.92mm |
Width | 4.88mm |
Height | 3.18mm |
Number of Channels | Dual |
Max. Forward current | 25mA |
Max. Forward Voltage | 1.8V |
Min. Propagation Delay Tplh | 1.5uS |
Min. CTR | 7% |
Min. CMTI | 10V/uS |
Max. Propagation Delay Tplh | 1.5uS |
Max. CTR | 50% |
Common Mode Transient Immunity at High (CMH) | 1kV/uS |
Min. Isolation Voltage | 3750V |
Max. Saturation Voltage Vce | 0.4V |
Max. Power Dissipation | 100mW |
Min. Operating Temp. | -55C |
Max. Operating Temp. | 100C |
Packaging | Tape & Reel |
Min. Storage Temp. | -55C |
Max. Storage Temp. | 125C |
* required fields